FMBTA92 Datasheet, PDF (1/2 Pages) First Components International – NPN SILICON TRANSISTOR EPITAXIAL PLANAR TRANSISTOR

Description
Mechanical Dimensions
SOT-23
Dimension in Inch
JUNCTION TEMPERATURE -----------------------------
STORAGE TEMPERATURE ------------------------------
MAX POWER DISSIPATION Ta=25 -----------------
MAX VOLTAGE AND CURRENT Ta=25
VCBO COLLECTOR TO BASE VOLTAGE-------------
VCEO COLLECTOR TO EMITTER VOLTAGE--------
VEBO EMITTER TO BASE VOLTAGE------------------
IC COLLECTOR CURRENT--------------------------------
+150 MAX
-55~ + 150
250mW
300V
300V
5.0V
500mA
Characteristics (Ta=25 )
Collector-Emitter Voltage@ Ic=10mA
Vceo
Collector-Base Breakdown@ Voltage Ic=100uA Vcbo
Emitter- base Breakdown Voltage@ Ie =10uA Vebo
Collector Cutoff Current@ Vcb=200V
Icbo
Max
Emitter cutoff Current@ Vce=3V
Iebo
Max
Ic=20mA, Ib=2mA
Vce(sat) Max
Ic=20mA, Ib=2mA
Vbe(on) Max
Static Forward Current Transfer Ratio
Ic=1mA, Vce=10V
hFE1 Min
Ic=10mA, Vce=10V
hFE2 Min
Ic=30mA, Vce=10V
hFE3 Min
Current-Gain-bandwidth Product
@Ic=10mA, Vce=20V, f=100MHz
fT
Min
300V
300V
5V
250nA
100nA
500mV
900mV
25
40
25
50MHz
Output Capacitance @ Vcb=20V, f=1MHz
Cob
Max 6pF