FMBTA06 Datasheet, PDF (1/2 Pages) First Components International – Silicon Transistor Amplifier Transistor

Description
Mechanical Dimensions
SOT-23
Dimension in inchs
JUNCTION TEMPERATURE -----------------------------
STORAGE TEMPERATURE ------------------------------
MAX POWER DISSIPATION Ta=25 -----------------
MAX VOLTAGE AND CURRENT Ta=25
VCBO COLLECTOR TO BASE VOLTAGE-------------
VCEO COLLECTOR TO EMITTER VOLTAGE--------
VEBO EMITTER TO BASE VOLTAGE------------------
IC COLLECTOR CURRENT--------------------------------
+150 MAX
-55~ + 150
250mW
80V
80V
4V
500mA
Characteristics (Ta=25 )
Collector-Emitter Voltage@ Ic=10mA
Collector-Base Breakdown@ Voltage Ic=100uA
Emitter- base Breakdown Voltage@ Ie =100uA
Collector Cutoff Current@ Vcb=80V
mitter cutoff Current@ Vce=60V
Ic=100mA, Ib=10mA
Ic=100mA, Vce=1V
Static Forward Current Transfer Ratio
Ic=10mA, Vce=1V
Ic=100mA, Vce=1V
Current-Gain-bandwidth Product
@Ic=10mA, Vce=2V, f=100MHz
Vceo
Vcbo
Vebo
Icbo
Iceo
Vce(sat)
Vbe(on)
hFE1
hFE2
fT
80V
80V
4V
Max 100nA
Max 100nA
Max 0.25V
Max 1.2V
Min
50
Min
50
Min 100MHz