FMBT3906 Datasheet, PDF (1/2 Pages) Formosa MS – PNP EPITAXIAL PLANAR TRANSISTOR

Data Sheet
Description
3
2
1
2
PNP General Purpose
Transistor
Mechanical Dimensions
.110
.060
2
.037
.115
.037
1
.016
3
3
.043
.016
.004
1
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current (Continuous)
Thermal Characteristics
Characteristic
Total Device Dissipation FR-5 Board (Note1)
T_A = 25^oC
Derate above 25^oC
Thermal Resistance
Total Device Dissipation
Alumina Substrate, T_A = 25^oC (Note 2)
Derate above 25^oC
Thermal Resistance
Junction and Storage Temperature
Notes:
(1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(3) Pulse test: Pulse width < 300 µs, duty cycle < 2.0%.
Symbol
V_CEO
V_CBO
V_EBO
I_C
Symbol
P_D
R_θJA
P_D
R_θJA
T_J, T_STG
Value
-40
-40
-5.0
-200
Max
225
1.8
556
300
2.4
417
-55 to 150
Units
Vdc
Vdc
Vdc
mAdc
Units
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C