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| FMBT1815 Datasheet, PDF (1/2 Pages) First Components International – NPN Epitaxial Planar Transistor Collector - Emitter Voltage VCEO | |||
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Data Sheet
Description
3
2
2
1
NPN Epitaxial
Planar Transistor
Mechanical Dimensions
.110
.060
3
2
.016
.037
.115
.037
3
1
1
.043
.016
.004
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current (Continuous)
Total Device Dissipation FR-5 Board (Note1)
TA = 25oC
Junction and Storage Temperature
Electrical Characteristics @ 25oC
Characteristic
Collector - Emitter Breakdown Voltage
(IC = 1.0mA)
Collector - Base Breakdown Voltage
(IC = 0.1mA)
Emitter - Base Breakdown Voltage
(IE = 0.01mA)
Collector Cutoff Current
(VCB = 60V)
Emitter Cutoff Current
(VEB = 5.0V)
DC Current Gain
(IC = 2.0 mA, VCE = 6.0 V)*
(IC = 150 mA, VCE = 6.0 V)
Collector - Emitter Saturation Voltage
(IC = 100 mA, IB = 10 mA)
Base - Emitter Saturation Voltage
(IC = 100 mA, IB = 10 mA)
Current - Gain - Bandwidth Product
(IC = 1.0 mA, VCE = 10 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
* Classification of hFE
Rank
C4Y
Range
120-240
C4G
200-400
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, TSTG
Symbol
VBR(CEO)
VBR(CBO)
VBR(EBO)
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
fT
Cob
Value
50
60
5.0
150
125
-55 to 150
Min
50
60
5.0
---
---
120
25
---
---
80
---
C4B
350-600
Units
V
V
V
mA
mW
oC
Max
Unit
---
V
---
V
---
V
0.1
µA
0.1
µA
---
600
---
Vdc
0.25
Vdc
1.0
---
MHz
3.5
pF
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