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| FMBBAS19 Datasheet, PDF (1/1 Pages) First Components International – 200 mW EPITAXIAL PLANAR DIODES | |||
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Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
Description
Pin 1 NC
Pin 3
Pin 2
Features
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
Mechanical Dimensions
.110
.060
2
.037
.115
.037
1
.016
3
.043
.016
.004
n INDUSTRY STANDARD SOT-23
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25OC.
FMBBAS19...21
Units
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Forward Voltage...VF
@ IF = 100 mA
DC Reverse Current...IR @ VR = 70V
Power Dissipation...PD
Reverse Recovery Time...tRR
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
FMBBAS19
120
100
FMBBAS20
200
150
FMBBAS21
250
200
Volts
Volts
............................................. 6 2 5 ............................................... mAmps
............................................. 2.5 ............................................... Amps
............................................. 1.0 ............................................... Volts
............................................. 0.1 ............................................... µAmps
............................................. 2 0 0 ............................................... mW
............................................. 5 0 ............................................... nS
......................................... -25 to 85 .......................................... °C
......................................... -65 to 150 ..........................................
°C
PVV = 100nS
.01 uF
Device Under Test
5K Ohms
50 Ohms
IF
IR
Output
Trr
0.1 IR
RG = 50 Ohms
Page 10-25
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