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FMBBAS16 Datasheet, PDF (1/1 Pages) First Components International – 200 mW EPITAXIAL PLANAR DIODES
Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
Description
Pin 1 NC
Pin 3
Pin 2
Features
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
Mechanical Dimensions
.110
.060
2
.037
.115
.037
1
.016
3
.043
.016
.004
n INDUSTRY STANDARD SOT-23
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25OC.
FMBBAS16
Units
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
FMBBAS16
85
75
Volts
Volts
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Forward Voltage...VF
@ IF = 150 mA
DC Reverse Current...IR @ VR = 75V
Power Dissipation...PD
Frequency...F
............................................. 215 ............................................... mAmps
............................................. 4 ............................................... Amps
............................................. 1.25 ............................................... Volts
............................................. 5.0 ...............................................
............................................. 200 ...............................................
............................................. 100 ...............................................
µAmps
mW
MHz
Typical Junction Capacitance...CJ
Reverse Recovery Time...tRR
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
PVV = 100nS
.01 uF
............................................. 2.0 ............................................... p F
............................................. 4.0 ............................................... nS
......................................... -25 to 85 .......................................... °C
......................................... -65 to 150 .......................................... °C
Device Under Test
5K Ohms
Output
IF
Trr
0.1 IR
50 Ohms
IR
RG = 50 Ohms
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