FM840 Datasheet, PDF (1/5 Pages) First Components International – 8Amps 500 Voltage N Channel MOSFET

FM840 / FMF840 8Amps 500 Voltage N Channel MOSFET
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination ‹
scheme to provide enhanced voltage-blocking capability ‹
without degrading performance over time. In addition, this ‹
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
‹
efficient design also offers a drain-to-source diode with a ‹
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/ITO-220
Top View
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
TO-220
ITO-220
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
(VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
șJC
șJA
TL
Value
8.0
32
±20
±40
125
40
-55 to 150
320
1.0
62.5
260
Unit
A
V
V
W
к
mJ
к/W
к