FM75N08 Datasheet, PDF (1/7 Pages) First Components International – 75A 80V N Channel Mosfet Transistor

75A 80V N Channel Mosfet Transistor
█ APPLICATIONSL
Low Voltage high-Speed Switching.
T_stg——Storage Temperature………………………-55~175℃
T_j ——Operating Junction Temperature ………………150℃
P_D —— Allowable Power Dissipation（T_c=25℃）………173W
V_DSS —— Drain-Source Voltage ………………………80V
V_GSS —— Gate-Source Voltage ………………………±20V
I_D —— Drain Curren（t T_c=25℃）………………………75A
R_Dson—— ^{Static Drain Source on-state Resistance…… 0.015Ohm @10V}
Qg —— ^{Gate Charge ………………………………… 80nC}
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_C = 25°C)
Continuous Drain Current(@T_C = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
80
75
52.5
300
±20
1310
17.3
7.0
173
1.15
- 55 ~ 175
300
Value
Typ.
-
0.5
-
Max.
0.87
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W