FM50N06 Datasheet, PDF (1/5 Pages) First Components International – 50A 60V N Channel Mosfet

50A 60V N Channel Mosfet
█ APPLICATIONSL
Low Voltage high-Speed Switching.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature……………………………-55~175℃
T_j ——Operating Junction Temperature …………………………150℃
P_D —— Allowable Power Dissipation（T_c=25℃）…………………130W
V_DSS —— Drain-Source Voltage ………………………………… 60V
V_GSS —— Gate-Source Voltage …………………………………±20V
I_D —— Drain Curren（t T_c=25℃）……………………………………50A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
Drain-Source
BV_{DSS Voltage}
Breakdown ₆₀
V I_D=250μA ,V_GS=0V
I_DSS Zero Gate Voltage Drain Current
1 μA V_DS = 60V，V_GS=0
I_GSS Gate –Source Leakage Current
V_GS(th) Gate Threshold Voltage
2.0
±100 nA V_GS=±20V , V_DS =0V
4.0
V V_DS = V_GS , I_D =250μA
R_DS(on) StaticDrain-Source
On-Resistance
0.018 0.023 Ω V_GS=10V, I_D =25A
Ciss Input Capacitance
880 1140 pF
Coss ^{Output Capacitance}
430 560 pF
V_DS =25V, V_GS=0,f=1MHz
Crss ^{Reverse Transfer Capacitance}
110 140 pF
t_d(on) Turn - On Delay Time
60 130 nS
tr
t_d(off)
t_f
Qg
Qgs
Qgd
Is
Rise Time
Turn - Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Continuous Source Current
185 380 nS
75 160 nS
60 130 nS
39
45 nC
9.5
nC
13
nC
50 A
V_DD =30V, I_D =25A
R_G= 50 Ω*
V_DS =48V
VGS=10V
ID=50A*
V_SD Diode Forward Voltage
Rth Thermal Resistance，
（j-c） Junction-to-Case
*Pulse Test：Pulse Width≤300μs，Duty Cycle≤2%
1.5 V I_S =50A , V_GS=0
1.15 ℃/W