FCR100-6 Datasheet, PDF (1/2 Pages) First Components International – 0.8 Amp Silicon Controlled rectifiers

Description
TO-92
Mechanical Dimensions
1
2
3
1. CATHODE
2. GATE
3. ANODE
Feature:
．Driven directly with IC and MOS device. ．Sensitive gate trigger current.
．Feature proprietary, void-free glass passivate ．Designed for high volume, line-powered
chips.
control application in relay lamp drivers, small
．Available in voltage ratings from 200 to 600 motor controls, gate drivers for large thyristors.
volts. (VDRM and VRRM)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta=25 C )
PARAMETERS
SYMBOL
DEVICE
NUMBER
V
UNITS
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage (1)
VDRM
&
VRRM
FCR100-6
400
VOLT
RMS On-State Current at Ta=57℃ and Conduction
Angle of 180º
Peak Surge (Non-Repetitive)On-State Current,
½ Cycle ,at 50Hz or 60Hz
Peak Gate-Trigger Current for 3µ sec , Max
Peak Gate-Power Dissipation at IGT≦IGTM
Average Gate-Power Dissipation
I_T(RMS)
I_TSM
I_GTM
P_GM
P_G(AV)
0.8
AMP
8
AMP
0.8
AMP
0.1
WATT
0.01
WATT
Peak gate reverse voltage
V_RGM
6
V
Peak Off-State Current, (1)Ta=25℃
VDRM & VRRM=Max. Rating Ta=125℃
Maximum On-State Voltage. (Peak)
At Tc=25℃ and IT =Rated Amps
DC Holding Current,(1)
Critical Rate-Of-Rise of off-State Voltage.(1)
Gate Open,Ta=110℃
DC Gate –Trigger Current for Anode Voltage=7VDC,
RL=100Ω
DC Gate –Trigger Voltage for Anode Voltage=7VDC,
RL=100Ω
I_DRM &
I_RRM
V_TM
I_HO
Critical
dv/dt
I_GT
V_GT
10
µA
200
MAX
1.7
VOLT
MAX
5
mA
MAX
5
V/µ sec
200
µA
MAX
0.8
VOLT
MAX
Gate-Controlled Turn-on Time tD+tR IGT=10mA
Tgt
2.2
µ sec
Thermal Resistance , Junction-to-Case
Storage Temperature range
Operating Temperature Range , Tj
RθJ-C
Tstg
Toper
75
-40 to + 150
-40 to + 110
℃/WATT
TYP
℃
℃
(1)RGK=1KΩ
Date:2005/07/14
Rev.No 1.