FCI2302 Datasheet, PDF (1/5 Pages) First Components International – N-Channel High-Density Trench MOSFET

FCI2302 N-Channel High-Density Trench MOSFET
DESCRIPTION
Our FCI2302 N-Channel High-Density Trench MOSFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design of our products provides the
designer with an extremely efficient and reliable device for use in a variety of applications.
FEATURES
• Super high dense cell trench design for low
R_DS(on)
• N-Channel Trench MOSFET
• SOT-23-3L Footprint
• Available in Tape and Reel
• Rugged and Reliable
V_DSS = 20V
R_DS(on) = 85mΩ (max.) @ V_GS = 4.5V (I_D = 3.6A)
R_DS(on) = 115mΩ (max.) @ V_GS = 2.5V (I_D = 3.1A)
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC unless otherwise specified)
Characteristic
Symbol
Drain-Source Voltage
Continuous Drain Current¹ @ T_A = 25^oC
Pulsed Drain Current²
Maximum Power Dissipation¹
Drain-Source Diode Forward Current¹
Gate-to-Source Voltage
Junction and Storage Temperature Range
THERMAL RESISTANCE
Characteristic
Junction-to-Ambient Thermal Resistance¹
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%.
V_DS
I_D
I_DM
P_D
I_S
V_GS
T_J, T_STG
Symbol
R_θJA
Value
20
2.8
10
1.25
1.6
±8
-55 to + 150
Value
85
Unit
V
A
W
A
V
o^C
Unit
o_C/W