EM513 Datasheet, PDF (1/2 Pages) Semikron International – Standard silicon rectifier diodes

Description
1.0 Amp Surface Mount
Glass Passivated Diode
Mechanical Dimensions
SOLDERABLE ENDS
D2=D1
Đ0
Ē0.20
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
MELF( DO-213AB)
Dimensions in millimeters
FEATURES
Glass passivated device
Ideal for surface mouted applications
Low leakage current
Metallurgically bonded construction
MECHANICAL DATA
Case:JEDEC MELF (DO-213AB),molded plastic over
passivated chip
Terminals:Solder Plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0046 ounces, 0.116 gram
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
EM
EM
EM
513
516
518
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
1300
910
1300
1600
1120
1600
1800
1260
1800
Maximum average forword
I_(AV)
1.0
rectified current T_A=75
Peak forward surge current 8.3ms single
half-sine-wave superimposed
I_FSM
40
on rated load (JEDEC method)
Maximum forward voltage at 1.0A
Maximum DC reverse current @T_A=25C
at rated DC blockjing voltage @T_A=125C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating temperature range
Storage temperature range
V_F
I_R
C_j
R_jθL
R_jθA
T_j
T_STG
1.1
5.0
50
15
20
50
- 55 --- + 175
- 55 --- + 175
NOTES:1. Measured at 1.0MHz and applied average voltage of 4.0V DC.
2. Thermal resistance junction to lead, 6.0 mm ² coppeer pads to each terminal.
3. Thermal resistance junction to ambient, 6.0 mm ² coppeer pads to each terminal.
EM
2000
2000
1400
2000
UNITS
V
V
V
A
A
V
uA
pF
C/W
C/W
C
C