BT151 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Thyristors

Description
Mechanical Dimensions
A
C
Marking
G
F ^A***
F ***
BT151
BT151
- 500
- 650
TO-220AB
***=Date Code
For use in Applications Requiring high Bidirectional Blocking Voltage Capability and high
Thermal Cycling Performance. Typical Applications include Motor Control, Industrial and
Domestic Lighting, Heating and Static Switching
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive Peak Off State Voltage
SYMBOL
V_DRM, V_RRM
TEST CONDITION
BT151-
VALUE
500
650
*500
*650
Average On State Current
I_{T (AV)} half sine wave, T_mb < 109ºC
7.5
RMS On State Current
I_{T (RMS)}
all conduction angles
12
Non Repetitive Peak On State Current
I_TSM
half sine wave, T_J=25ºC
prior to surge
t=10ms
100
t=8.3ms
110
l²t for Fusing
Repetitive Rate of Rise of On State
Current After Triggering
Peak Gate Current
Peak Gate Voltage
Peak Reverse Gate Voltage
Peak Gate Power
Average Gate Power
Storage Temperature
Operating Junction Temperature
I²t
dl_T/dt
I_GM
V_GM
V_RGM
P_GM
P_{G (AV)}
T_stg
T_j
t=10ms
I_TM=20A, I_G=50mA,
dl_G/dt=50mA/µs
Over any 20ms period
50
50
2.0
5.0
5.0
5.0
0.5
- 40 to +150
125
THERMAL RESISTANCE
Junction to Mounting Base
Junction to Ambient
R_{th (j-mb)}
R_{th (j-a)}
in free air
1.3 max
60 typ
*Although not recommended, off state voltage upto 800V may be applied without damage, but the
thyristor may switch to the on state. The rate of rise of current should not exceed 15A/µs
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
ºC
ºC
K/W
K/W