BC847 Datasheet, PDF (1/1 Pages) STMicroelectronics – SMALL SIGNAL NPN TRANSISTORS

NPN Silicon Planar Epitaxial Transistors
BC846A, B
BC847A, B, C
BC848A, B, C
2. 4
1. 3
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Unit: mm
FEATURES
Power dissipation
P_CM: 0.225W (Tamb=25℃) Note1
Collector-base voltage
V _CBO:
BC846 80 V
BC847 50 V
Collector current
I _CM: 0.1 A
BC848 30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
Note1: Transistor mounted on an FR4 Printed-circuit board.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
BC846
80
BC847
VCBO
Ic= 10µA, IE=0
50
V
BC848
30
Collector-emitter breakdown voltage
BC846
65
BC847
VCEO
Ic= 10mA, IB=0
45
V
BC848
30
Emitter-base breakdown voltage
VEBO
IE= 10µA, IC=0
6
V
Collector cut-off current
Collector cut-off current
BC846
BC847
ICBO
BC848
BC846
BC847
ICEO
BC848
VCB= 70V, IE=0
VCB= 50V, IE=0
VCB= 30V, IE=0
VCE= 60V, IB=0
VCE= 45V, IB=0
VCE= 30V, IB=0
0.1
µA
0.1
µA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
µA
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C/BC848C
HFE(1)
VCE= 5V, IC= 2mA
110
220
200
450
420
800
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB= 5 mA
0.5
V
Base-emitter saturation voltage
VBE(sat) IC= 100mA, IB= 5mA
1.1
V
Transition frequency
fT
VCE= 5 V, IC= 10mA
100
f=100MHz
DEVICE MARKING
BC846A=1A; BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J; BC848B=1K ; BC848C=1L
MHz