BC817 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

NPN Silicon Epitaxial Plannar Transistors
BC817-16LT1
BC817-25LT1
BC817-40LT1
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
P_CM : 0.3
Collector current
W（Tamb=25℃）
I_CM : 0.5
A
Collector-base voltage
V_CBO : 50 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
2.4
1.3
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V_CBO
Ic= 10 μA， I_E=0
50
V_CEO
Ic= 10 mA， I_B=0
45
V_EBO
I_E= 1 μA， I_C=0
5
Collector cut-off current
I_CBO
V_CB= 45 V , I_E=0
Collector cut-off current
I_CEO
V_CE= 40 V , I_B=0
Emitter cut-off current
I_EBO
V_EB= 4 V， I_C=0
DC current gain
817-16
100
817-25
h_FE（₁）
V_CE= 1 V, I_C= 100mA
160
817-40
250
Collector-emitter saturation voltage
V_CE(sat) I_C= 500mA, I_B= 50 mA
Base-emitter saturation voltage
V_BE(sat) I_C= 500 mA, I_B= 50mA
MAX
0.1
0.2
0.1
250
400
600
0.7
1.2
UNIT
V
V
V
μA
μA
μA
V
V
Transition frequency
V_CE= 5 V, I_C= 10mA
f_T
f=100MHz
100
MHz
DEVICE MARKING
BC817-16LT1=6A; BC817-25LT1=6B; BC817-40LT1=6C