BC807 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor

PNP Silicon Epitaxial Plannar Transistors
BC807-16LT1
BC807-25LT1
BC807-40LT1
FEATURES
·Ldeally suited for automatic insertion
·epitaxial planar die construction
·complementary NPN type available(BC817)
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
2.4
1.3
MARKING: 16LT1:5A1; 25LT1:5B; 40LT1:5C
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J, T_stg
Junction and Storage Temperature
Unit : mm
Value
-50
-45
-5
-0.5
0.3
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V_CBO Ic= -10 μA， I_E=0
-50
V_CEO Ic= -10 mA， I_B=0
-45
V_EBO
I_E= -1 μA， I_C=0
-5
Collector cut-off current
I_CBO
V_CB= -45 V , I_E=0
Collector cut-off current
I_CEO
V_CE= -40 V , I_B=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
V_EB= -4 V , I_C=0
807-16
100
807-25 hFE（1） VCE= -1V, IC= -100mA 160
807-40
250
V_CE(sat) I_C=-500mA, I_B= -50 mA
Base-emitter saturation voltage
V_BE(sat) I_C= -500 mA, I_B= -50mA
Transition frequency
f_T
V_CE= -5 V, I_C= -10mA
100
f=100MHz
MAX UNIT
V
V
V
-0.1 μA
-0.2 μA
-0.1 μA
250
400
600
-0.7 V
-1.2 V
MHz