BC557 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – Switching and Amplifier

PNP Silicon Planar Epitaxial Transistors
FEATURES
Power dissipation
P_CM:
Collector current
0.625 W (Tamb=25℃)
I_CM:
Collector-base voltage
-0.1 A
V_CBO:
BC556 -80 V
BC557 -50 V
BC558 -30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1
1. COLLECTOR
2
2. BASE
3
3. EMITTER
1 23
TO-92
Electrical Characteristics (Ta=25 ^oC unless otherwise specified)
SPEC
min max unit
Collector-base breakdown voltage
BC556
-80
BC557
VCBO
Ic= -100µA, IE=0 -50
V
BC558
-30
Collector-emitter breakdown voltage
BC556
-65
BC557
VCEO
IC= -2mA , IB=0
-45
V
BC558
-30
Emitter-base breakdown voltage
VEBO
IE= -100µA, IC=0
-6
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC557A
BC556B/BC557B/BC558B
BC557C
Collector-emitter saturation voltage
VCB=- 70 V, IE=0
ICBO
VCB= -45 V, IE=0
VCB= -25V, IE=0
VCE= -60 V, IB=0
ICEO
VCE= -40 V, IB=0
VCE= -25 V, IB=0
-0.1 µA
-0.1 µA
IEBO
VEB= -5 V, IC=0
-0.1 µA
hFE(1)
VCE=-5V, IC= -2mA
120 500
120 800
120 800
120 220
180 460
420 800
VCE(sat) IC=-100mA, IB= -5mA
-0.3 V
Base-emitter saturation voltage
VBE(sat) IC= -100mA, IB=-5mA
-1
V
Transition frequency
VCE= -5V, IC= -10mA
fT
150
f = 100MHz
MHz