BC337 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistor

FCI Semiconductor
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES
Power dissipation
1. COLLECTOR
P_CM:
0.625 W (Tamb=25℃)
2. BASE
Collector current
I_CM:
0.8 A
Collector-base voltage
V_CBO:
BC337 50 V
BC338 30 V
Operating and storage junction temperature range
3. EMITTER
123
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
VCBO
VCEO
Ic= 100µA, IE=0
50
30
IC= 10 mA , IB=0
45
25
Emitter-base breakdown voltage
VEBO
IE= 10µA, IC=0
5
Collector cut-off current
ICBO
BC337
VCB= 45 V, IE=0
0.1
BC338
VCB= 25V, IE=0
0.1
Collector cut-off current
BC337
ICEO
VCE= 40 V, IB=0
0.2
BC338
VCE= 20 V, IB=0
0.2
Emitter cut-off current
IEBO
VEB= 4 V, IC=0
0.1
UNIT
V
V
V
V
V
µA
µA
µA
µA
µA
DC current gain
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
hFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
VCE=1V, IC= 100mA
100
100
160
250
VCE=1V, IC= 300mA
60
IC=500 mA, IB= 50 mA
IC= 500 mA, IB=50 mA
VCE= 5V, IC= 10mA
210
f = 100MHz
630
250
400
630
0.7
V
1.2
V
MHz