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| BAV70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed double diode | |||
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Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
Description
3
1
2
Pin 3
Features
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
Mechanical Dimensions
.110
.060
Pin 2
1
.037
.115
.037
2
.016
3
Pin 1
.043
.016
.004
n INDUSTRY STANDARD SOT-23
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Power Dissipation...PD
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
Electrical Characteristics
Maximum Forward Voltage...VF
@ IF = 50 mA
Maximum DC Reverse Current...IR @ VR = 70V
Maximum Diode Capacitance...CD
Maximum Reverse Recovery Time...tRR
.01 uF
PVV = 100ns
5K Ohms
BAV70
BAV70
85
75
Units
Volts
Volts
............................................. 625 ............................................... mAmps
............................................. 4.0 ............................................... Amps
......................................... 200 .......................................... mW
......................................... -25 to 85 .......................................... °C
......................................... -65 to 150 .......................................... °C
............................................. 1.0 ............................................... Volts
............................................. 2.5 ............................................... µAmps
............................................. 1.5 ............................................... pF
............................................. 4.0 ............................................... ns
Device Under Test
IF
Output
Trr
0.1 IR
50 Ohms
IR
RG = 50 Ohms
Page 10-20
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