BAS19 Datasheet, PDF (1/1 Pages) NXP Semiconductors – General purpose diodes

Data Sheet
200 mW EPITAXIAL PLANAR
HIGH-SPEED DIODES
Description
3
Pin 2 NC
1
2
Mechanical Dimensions
Pin 3
.110
.060
1
.016
.037
.115
.037
3
2
Pin 1
.043
.016
.004
Features
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
n INDUSTRY STANDARD SOT-23
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Repetitive Reverse Voltage...V_RRM
Continuous Reverse Voltage...V_R
Average Forward Rectified Current...I_F(AV)
Non-Repetitive Peak Forward Current...I_FSM
t = 1µs
t = 1s
Repetitive Peak Forward Current...I_FRM
Forward Current (DC)...I_F
Junction Temperature...T_J
Storage Temperature Range...T_STRG
Power Dissipation...P_D
Electrical Characteristics
Maximum Forward Voltage...V_F
I_F = 100 mA
I_F = 200 mA
Maximum Reverse Current @ Rated V_R...I_R
T_J = 25^oC
T_J = 150^oC
Maximum Reverse Recovery Time...t_RR
Typical Differential Resistance @ I_F = 10mA...R_DIFF
BAS19...21
Units
BAS19
120
100
BAS20
200
150
BAS21
250
200
Volts
Volts
............................................. 200 ............................................... mAmps
Amps
............................................. 2.5 ...............................................
............................................. 0.5 ...............................................
............................................. 625 ............................................... mAmps
............................................. 200 ............................................... mAmps
............................................. 150 ............................................... °C
........................................ -55 to 150 ......................................... °C
............................................. 250 ............................................... mWatts
............................................. 1.0 ...............................................
............................................. 1.25 ...............................................
Volts
............................................. 100 ............................................... nAmps
............................................. 100 ............................................... µAmps
............................................. 7 5 ............................................... ns
............................................. 5.0 ............................................... Ω
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