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BAS16 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – Small Signal Diode
Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
Description
Pin 3
3
Pin 2 NC
1
2
Pin 1
Features
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
Mechanical Dimensions
.110
.060
1
.037
.115
.037
2
.016
3
.043
.016
.004
n INDUSTRY STANDARD SOT-23
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Power Dissipation...PD
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
Electrical Characteristics
Maximum Forward Voltage...VF
@ IF = 150 mA
Maximum DC Reverse Current...IR
Maximum Frequency...f
@ VR = 75V
Maximum Diode Capacitance...CD
Maximum Reverse Recovery Time...tRR
.01 uF
PVV = 100ns
5K Ohms
BAS16
Units
BAS16
85
75
Volts
Volts
............................................. 215 ............................................... mAmps
............................................. 4 ............................................... Amps
......................................... 200 .......................................... mW
......................................... -25 to 85 .......................................... °C
......................................... -65 to 150 .......................................... °C
............................................. 1.25 ............................................... Volts
............................................. 1.0 ...............................................
............................................. 100 ...............................................
............................................. 2.0 ...............................................
............................................. 4.0 ...............................................
µAmps
MHz
pF
ns
Device Under Test
IF
Output
Trr
0.1 IR
50 Ohms
IR
RG = 50 Ohms
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