2N7002E Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel TrenchMOS FET

P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( W ) Max
60V
0. 25A
3.0 @ VGS = 10V
4.0 @ VGS = 5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
60
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous ^a @ TJ=125 C
ID
250
mA
-P ulsed ^b
IDM
1.0
A
Drain-S ource Diode Forward C urrent ^a
IS
250
mA
Maximum P ower Dissipation ^a
PD
200
mW
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
625
C /W
1