2N2907A Datasheet, PDF (1/4 Pages) Seme LAB – HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR

2N2907A 60V 0.6A PNP Silicon Amplifier Transistor
Description
COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
TO–92
Mechanical Dimensions
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
–60
–60
–5.0
–600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
1.5
Watts
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage⁽¹⁾
(I_C = –10 mAdc, I_B = 0)
Collector–Base Breakdown Voltage
(I_C = –10 mAdc, I_E = 0)
Emitter–Base Breakdown Voltage
(I_E = –10 mAdc, I_C = 0)
Collector Cutoff Current
(V_CE = –30 Vdc, V_EB(off) = –0.5 Vdc)
Collector Cutoff Current
(V_CB = –50 Vdc, I_E = 0)
(V_CB = –50 Vdc, I_E = 0, T_A = 150°C)
Emitter Cutoff Current
(V_EB = –3.0 Vdc)
Collector Cutoff Current
(V_CE = –10 V)
Base Cutoff Current
(V_CE = –30 Vdc, V_EB(off) = –0.5 Vdc)
°C/W
°C/W
Symbol
Min
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CEX
I_CBO
I_EBO
I_CEO
I_BEX
–60
–60
–5.0
—
—
—
—
—
—
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Max
—
—
—
–50
–0.01
–10
–10
–10
–50
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
nAdc
nAdc