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2N2222A Datasheet, PDF (1/2 Pages) Seme LAB – HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR
Data Sheet
Description
TO-92
NPN General Purpose
Transistor
Mechanical Dimensions
3
2
1
2
1
3
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current (Continuous)
Total Device Dissipation
TA = 25oC
Junction and Storage Temperature
Electrical Characteristics
Characteristic
Collector - Emitter Breakdown Voltage (Note 3)
(IC = 10mA)
Collector - Base Breakdown Voltage
(IC = 10µA)
Emitter - Base Breakdown Voltage
(IE = 10µA)
Base Cutoff Current
(VCB = 60V)
Collector Cutoff Current
(VCE = 60V, VEB(OFF) = 3.0V)
Emitter Cutoff Current
(VEB = 3.0V)
DC Current Gain
(IC = 0.1 mA, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
Collector - Emitter Saturation Voltage
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
Base - Emitter Saturation Voltage
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
Current - Gain - Bandwidth Product (Note 4)
(IC = 20 mA, VCB = 20 V, f = 100 MHz)
Classification of hFE4
Rank
A
B
Range
100-210
190-300
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, TSTG
Symbol
VBR(CEO)
VBR(CBO)
VBR(EBO)
ICBO
ICEX
IEBO
HFE
VCE(sat)
VBE(sat)
fT
Value
40
75
6.0
600
625
-55 to 150
Min
40
75
6.0
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35
50
75
100
40
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300
Units
V
V
V
mA
mW
oC
Max
Unit
---
V
---
V
---
V
10
nA
10
nA
10
nA
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---
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300
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V
0.3
1.0
V
1.2
2.0
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MHz
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