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1N4448 Datasheet, PDF (1/1 Pages) Rectron Semiconductor – SIGNAL DIODE
Data Sheet
Description
500 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
JEDEC
D0-35
.060
.090
.120
1.00 Min.
.200
.018
.022
Features
n PLANAR PROCESS
n 500 mW POWER DISSIPATION
n INDUSTRY STANDARD DO-35
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Power Dissipation...PD
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
Electrical Characteristics
Maximum Forward Voltage...VF
@ IF = 100 mA
Maximum DC Reverse Current...IR
Maximum Frequency...f
@ VR = 75v
Maximum Diode Capacitance...CD
Maximum Reverse Recovery Time...tRR
1N4448
Units
1N4448
100
75
Volts
Volts
............................................. 215 ............................................... mAmps
............................................. 500 ............................................... mAmps
............................................. 500 ............................................... mW
......................................... -25 to 85 .......................................... °C
......................................... -65 to 150 .......................................... °C
............................................. 1.0 ............................................... Volts
............................................. 5.0 ...............................................
............................................. 100 ...............................................
............................................. 2.0 ...............................................
............................................. 4.0 ...............................................
µAmps
MHz
pF
ns
.01 uF
5K Ohms
Device Under Test
IF
50 Ohms
IR
Output
Tr r
0.1 IR
RG = 50 Ohms
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