1N4151 Datasheet, PDF(1/1 Page) NXP Semiconductors

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1N4151 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diodes

Data Sheet

Description

500 mW EPITAXIAL

PLANAR DIODES

Mechanical Dimensions

JEDEC

D0-35

.060

.090

.120

1.00 Min.

.200

.018

.022

Features

n PLANAR PROCESS

n 500 mW POWER DISSIPATION

n INDUSTRY STANDARD DO-35

PACKAGE

n MEETS UL SPECIFICATION 94V-0

Maximum Ratings

Peak Reverse Voltage...VRM

RMS Reverse Voltage...VR(rms)

Average Forward Rectified Current...IO

Non-Repetitive Peak Forward Surge Current...IFSM

Power Dissipation...PD

Operating & Storage Temperature Range...TJ, TSTRG

Electrical Characteristics

Maximum Forward Voltage...VF

@ IF = 50 mA

Maximum DC Reverse Current...IR

Maximum Frequency...f

@ VR = 50v

Maximum Diode Capacitance...CD

Maximum Reverse Recovery Time...tRR

1N4151

Units

IN4151

Volts

............................................. 215 ............................................... mAmps

............................................. 500 ............................................... mAmps

............................................. 500 ............................................... mW

......................................... -65 to 150 ......................................... Â°C

............................................. 1.0 ............................................... Volts

............................................. 5 0 ............................................... nAmps

............................................. 100 ............................................... MHz

............................................. 2.0 ............................................... pF

............................................. 2.0 ............................................... ns

PVV = 100nS

.01 uF

5K Ohms

Device Under Test

50 Ohms

Output

Tr r

0.1 IR

RG = 50 Ohms

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