HUFA76504DK8 Datasheet, PDF (9/13 Pages) Fairchild Semiconductor – 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

HUFA76504DK8
PSPICE Electrical Model
.SUBCKT HUFA76504DK8 2 1 3 ;
CA 12 8 2.5e-10
CB 15 14 3e-10
CIN 6 8 2.6e-10
REV 18 January 2001
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 100.6
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 4.21e-10
LSOURCE 3 7 1.28e-10
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.1e-1
RGATE 9 20 5.74e1
RLDRAIN 2 5 10
RLGATE 1 9 42.1
RLSOURCE 3 7 12.8
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.72e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
LGATE
RLGATE
DPLCAP ₅
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
ESG
6
8
+
EVTHRES
+ ₁₉ -
EVTEMP
8
RGATE _{+ 18 - 6}
9
20 ²²
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
MMED
MSTRO
DBODY
CIN
8
S1A
12 ₁₃
8
S2A
14
15
13
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
+ ¹⁴
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*12),3.7))}
.MODEL DBODYMOD D (IS = 3.1e-13 N = 1.03 RS = 4.2e-2 TRS1 = 3e-4 TRS2 = 1.3e-6 CJO = 6.82e-10 TT = 3.3e-8 M = 0.8 XTI = 4)
.MODEL DBREAKMOD D (RS = 1.65 TRS1 = 1e-3 TRS2 = -9e-6)
.MODEL DPLCAPMOD D (CJO = 1.7e-10 IS = 1e-30 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 2.2 KP = 1.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 5.74e1)
.MODEL MSTROMOD NMOS (VTO = 2.56 KP = 18 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.94 KP = 0.04 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 5.74e2 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.12e-3 TC2 = -3e-7)
.MODEL RDRAINMOD RES (TC1 = 9e-3 TC2 = 2e-5)
.MODEL RSLCMOD RES (TC1 = 2.8e-3 TC2 = 1.9e-5)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2e-3 TC2 = -3e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.5e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1 VOFF= -4)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
Rev. A, June 4, 2001