RFG60P06E Datasheet, PDF (7/8 Pages) Fairchild Semiconductor – 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

RFG60P06E
PSPICE Electrical Model
.SUBCKT RFG60P06E 2 1 3;
REV 9/20/94
CA 12 8 1.01e-8
CB 15 14 1.05e-8
CIN 6 8 6.9e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -76.35
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 7.9e-9
LSOURCE 3 7 4.18e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 12.83e-3
RGATE 9 20 1.5
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.25e-3
RVTO 18 19 RVTOMOD 1
ESG
10
8
-⁶⁺
5
RDRAIN
DPLCAP
GATE
RGATE
EVTO
-
18
1 _LGATE 9
20 ⁸
RIN
16
VTO
-
6
21
MOS1
CIN
+
EBREAK ₁₇
18
-
MOS2
11
DBREAK
DRAIN
LDRAIN ²
DBODY
8
RSOURCE
LSOURCE
3
S1A
12 ₁₃
8
S2A
14
15
13
S1B
S2B
13
7
SOURCE
RBREAK
17
18
RVTO
CA
CB
+
6
EGS
-
8
+ ¹⁴
5
EDS
-
8
IT
19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.83
.MODEL DBDMOD D (IS=1.24e-12 RS=4.72e-3 TRS1=1.43e-3 TRS2=-4.91e-7 CJO=6.98e-9 TT=1.5e-7)
.MODEL DBKMOD D (RS=1.11e-1 TRS1=1.34e-3 TRS2=4.46e-12)
.MODEL DPLCAPMOD D (CJO=15e-10 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.71 KP=31.5 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.42e-4 TC2=0)
.MODEL RDSMOD RES (TC1=5.85e-3 TC2=7.69e-6)
.MODEL RVTOMOD RES (TC1=-3.39e-3 TC2=1.07e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.6 VOFF=2.6)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.6 VOFF=4.6)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.16 VOFF=-3.84)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.84 VOFF=1.16)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFG60P06E Rev. B