HUFA75842P3 Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET

HUFA75842P3, HUFA75842S3S
PSPICE Electrical Model
.SUBCKT HUFA75842 2 1 3 ; rev 13 October 1999
CA 12 8 4.10e-9
CB 15 14 4.10e-9
CIN 6 8 2.50e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 157.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 4.86e-9
LSOURCE 3 7 2.01e-9
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.72e-2
RGATE 9 20 0.73
RLDRAIN 2 5 10
RLGATE 1 9 48.6
RLSOURCE 3 7 20.1
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.58e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
LGATE
RLGATE
DPLCAP ₅
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
ESG
6
8
+
EVTHRES
+ ₁₉ -
EVTEMP
8
RGATE _{+ 18 - 6}
9
20 ²²
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
MMED
MSTRO
DBODY
CIN
8
S1A
12 ₁₃
8
S2A
14
15
13
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
+ ¹⁴
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*88),3.5))}
.MODEL DBODYMOD D (IS = 2.25e-12 RS = 2.45e-3 IFK=14 XTI = 5 TRS1 = 2.7e-3 TRS2 = 0 CJO = 2.60e-9 TT = 1.22e-7 M = 0.55)
.MODEL DBREAKMOD D (RS = 6.50e- 1TRS1 = 1e- 3TRS2 = 1e-6)
.MODEL DPLCAPMOD D (CJO = 3.30e- 9IS = 1e-3 0M = 0.82)
.MODEL MMEDMOD NMOS (VTO = 3.20 KP = 6 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.73)
.MODEL MSTROMOD NMOS (VTO = 3.63 KP = 86 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.78 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.30 )
.MODEL RBREAKMOD RES (TC1 =1.02e- 3TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 9.40e-3 TC2 = 2.70e-5)
.MODEL RSLCMOD RES (TC1 = 4.10e-3 TC2 = 4.00e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.57e-3 TC2 = -7.05e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.85e- 3TC2 =9.00e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.8 VOFF= -2.4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -5.8)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.8 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.8)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUFA75842P3, HUFA75842S3S Rev. B