FSQ0365_0709 Datasheet, PDF (7/24 Pages) Fairchild Semiconductor – Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter - Low EMI and High Efficiency

Electrical Characteristics (Continued)
T_A = 25°C unless otherwise specified.
Symbol
Parameter
t_W
Detection Time Window
f_S1
Initial Switching Freq.1
All but Q321
f_S2
Initial Switching Freq.2
Q321
Δf_S
Switching Frequency Variation⁽¹⁴⁾
I_FB
Feedback Source Current
D_MIN
Minimum Duty Cycle
V_START
V_STOP
UVLO Threshold Voltage
t_S/S1
Internal Soft-Start Time1 All but Q321
t_S/S2
Internal Soft-Start Time2
Q321
Burst Mode Section
V_BURH
V_BURL Burst-Mode Voltage
V_BUR(HYS)
Protection Section
FSQ0365
FSQ0265
I_LIM
Peak Current Limit
FSQ0165
FSQ321
FSQ311
V_SD
Shutdown Feedback Voltage
I_DELAY
t_LEB
Shutdown Delay Current
Leading-Edge Blanking Time⁽¹⁴⁾
V_OVP Over-Voltage Protection
t_OVP
T_SD
Over-Voltage Protection Blanking Time
Thermal Shutdown Temperature⁽¹⁴⁾
Sync Section
V_SH
V_SL
t_Sync
Sync Threshold Voltage
Sync Delay Time^(14)(16)
Total Device Section
I_OP
Oper. Supply Current (Control Part Only)
I_START Start Current
I_CH
V_STR
Start-up Charging Current
Minimum V_STR Supply Voltage
Condition
T_J = 25°C, V_sync = 0V
-25°C < T_J < 85°C
V_FB = 0V
V_FB = 0V
After turn-on
With free-running frequency
With free-running frequency
T_J = 25°C, t_PD = 200ns⁽¹⁵⁾
T_J = 25°C, di/dt = 240mA/µs
T_J = 25°C, di/dt = 200mA/µs
T_J = 25°C, di/dt = 175mA/µs
T_J = 25°C, di/dt = 125mA/µs
T_J = 25°C, di/dt = 112mA/µs
V_CC = 15V
V_FB = 5V
V_CC = 15V, V_FB = 2V
V_CC = 15V
V_CC = V_START - 0.1V
(before V_CC reaches V_START)
V_CC = 0V, V_STR = min. 40V
Notes:
13. Pulse test: Pulse-Width=300μs, duty=2%
14. Though guaranteed, it is not 100% tested in production.
15. Propagation delay in the control IC.
16. Includes gate turn-on time.
Min. Typ. Max. Unit
3.0
µs
50.5 55.6 61.7 kHz
84.0 89.3 95.2 kHz
±5 ±10 %
700 900 1100 µA
0%
11 12 13 V
789V
15
ms
10
ms
0.45 0.55 0.65 V
0.25 0.35 0.45 V
200
mV
1.32 1.50 1.68
1.06 1.20 1.34
0.8 0.9 1.0 A
0.53 0.60 0.67
0.53 0.60 0.67
5.5 6.0 6.5 V
4 5 6 µA
200
ns
5.5 6.0 6.5 V
2 3 4 µs
125 140 155 °C
0.55 0.70 0.85 V
0.14 0.20 0.26 V
300
ns
1 3 5 mA
270 360 450 µA
0.65 0.85 1.00 mA
26
V
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
7
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