FP7G50US60 Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Fig 13. Switching Loss vs. Collector
Common Emitter
10000 V = 300V, V = +/- 15V
CC
GE
I = 50A
C
T = 25^oC
C
T = 125^oC
Eoff
C
1000
Eon
100
20 40 60 80 100
I_C, Collector Current[A]
Fig 14. Gate Charge Characteristics
15
300 V
12
200 V
9
V = 100 V
CC
6
3
Common Emitter
R = 5.9 Ω
L
T = 25oC
C
0
0
100
200
Q_g, Gate Charge[nC]
Fig 15. SOA Characteristics
300
I MAX. (Pulsed)
100 C
I MAX. (Continuous)
C
10
DC Operation
50us
100us
1ms
1 Single Nonrepetitive
Pulse T = 25o C
C
Curves must be derated
linerarly with increase
in temperature
0.10.3
1
10
100 1000
V_CE, Collector-Emitter Voltage[V]
Fig 17. RBSOA Characteristics
300
100
10
1 _{Single Nonrepetitive}
Pulse T = 125o C
J
V = 15V
GE
R = 5.9 Ω
0.1 ₀
G
100
200
300
400
500
600
700
V_CE, Collector-Emitter Voltage[V]
Fig 16. Turn-Off SOA Characteristics
100
10
Safe Operating Area
V = 20V, T = 100^o C
GE
C
1
1
10
100
1000
V_CE, Collector-Emitter Voltage[V]
Fig 18. Transient Thermal Impedance
1
0.1
0.01
T = 25o C
C
IGBT :
1E-3
DIODE :
10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹
Rectangular Pulse Duration[sec]
FP7G50US60 Rev. A
7
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