FMS6G15US60 Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – Compact & Complex Module

Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
10000
Common Emitter
V_GE = ± 15V, R_G = 13Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
1000
E o ff
Eon
1 0 0 E o ff
5
10
15
20
25
30
C o ll e c t o r C u rr e n t, I c [ A ]
15
Common Emitter
R_L = 20 Ω
12
T_C = 25 ^oC
9
V = 100 V
CC
300 V
200 V
6
3
0
0
10
20
30
40
50
G ate C h arg e, Q [n C ]
g
Figure 15. SOA Characteristics
100
I_C MAX. (Pulsed)
1 0 _{IC MAX. (Continuous)}
1
DC Operation
50 us
100us
1 ms
0 . 1 ^{Single Nonrepetitive}
Pulse T_C = 25℃
Curves must be derated
linearly with increase
in temperature
0.0 1
0.1
1
10
100
1000
C o ll e c t o r - E m it t e r V o lt a g e , V [ V ]
CE
Figure 16. RBSOA Characteristics
50
10
1
Single Nonrepetitive
Pulse T_J ≤ 125℃
V_GE = 15V
0.1 ^{RG = 13 Ω}
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
Figure 17. Forward Characteristics
50
Common Cathode
V_GE = 0V
40
T_C = 25℃
T_C = 125℃
30
20
10
0
0
1
2
3
4
Forward Voltage, V_F [V]
Figure 18. Reverse Recovery Characteristics
20
10
T_rr
1
I_rr
0.1
4
Common Cathode
di/dt = 30A/㎲
T_C = 25℃
T_C = 100℃ ---------
8
12
16
Forward Current, I_F [A]
7
FMS6G15US60 Rev. B1
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