FGH40N60SMDF Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 600V, 40A Field Stop IGBT

Typical Performance Characteristics
Figure 19. Current Derating
90
Common Emitter
80
V_GE = 15V
70
60
50
40
30
20
10
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
Figure 21. Forward Characteristics
100
T_C = 175^oC
10
T_C = 25^oC
T_C = 25^oC
T_C = 175^oC
1
0
0.5
1.0
1.5
2.0
2.5
Forward Voltage, V_F [V]
Figure 23. Stored Charge
2750
2500
2250
T_C = 25^oC
T_C = 175^oC
2000
1750
1500
1250
1000
750
di/dt = 200A/μs
di/dt = 100A/μs
500
250
0
0 5 10 15 20 25 30 35 40 45
Forwad Current, I_F [A]
Figure 20. Load Current Vs. Frequency
120
110
100
90
80
70
60
50
40
30
20
10
0
1k
Square Wave
T_J < 175^oC, D = 0.5, V_CE = 400V
V_GE = 15/0V, R_G = 6Ω
Tc = 75^oC
Tc = 100^oC
10k
100k
1M
Switching Frequency, f [Hz]
Figure 22. Reverse Current
1000
100
T_C = 150^oC
10
1
T_C = 75^oC
0.1
0.01
T_C = 25^oC
0.001
0
100 200 300 400 500 600
Reverse Voltage,V_R [V]
Figure 24. Reverse Recovery Time
400
350
T_C = 25^oC
T_C = 175^oC
300
250
200
di/dt = 100A/μs
150
di/dt = 200A/μs
100
50
0
0 5 10 15 20 25 30 35 40 45
Forward Current, I_F [A]
FGH40N60SMDF Rev. B1
7
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