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FDS4559_F085 Datasheet, PDF (7/8 Pages) Fairchild Semiconductor – 60V Complementary PowerTrench MOSFET
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Typical Characteristics: Q1
10
ID = 4.5A
8
6
VDS = 10V
30V 20V
4
2
0
0
2
4
6
8
10
12
14
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS= 10V
SINGLE PULSE
0.1
RθJA= 135oC/W
TA= 25oC
100µs
1m
10ms
100ms
1s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
900
800
700
600
500
400
300
200
100
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 135oC/W
30
TA = 25oC
20
10
0
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4559_F085 Rev A (W)
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