FDPC8014S Datasheet, PDF (7/13 Pages) Fairchild Semiconductor – PowerTrench Power Clip

Typical Characteristics (Q2 N-Channel) T_J = 25 °C unless otherwise noted
160
V_GS = 10 V
V_GS = 4.5 V
V_GS = 3.5 V
120
V_GS = 3 V
80
V_GS = 2.5 V
40
0
0.00
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.25
0.50
0.75
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1.00
Figure 14. On- Region Characteristics
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
V_GS = 2.5 V
2
V_GS = 3 V
V_GS = 3.5 V
V_GS = 4.5 V V_GS = 10 V
0
0
40
80
120
160
I_D, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
1.6
I_D = 41 A
V_GS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 16. Normalized On-Resistance
vs. Junction Temperature
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
I_D = 41 A
3
2
T_J = 125 ^oC
1
T_J = 25 ^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs. Gate to
Source Voltage
160
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
V_DS = 5 V
80
40
0
1.0
T_J = 125 ^oC
T_J = 25 ^oC
T_J = -55 ^oC
1.5
2.0
2.5
3.0
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
200
100 V_GS = 0 V
10
1
0.1
0.01
T_J = 125 ^oC
T_J = 25 ^oC
T_J = -55 ^oC
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2013 Fairchild Semiconductor Corporation
7
FDPC8014S Rev.C7
www.fairchildsemi.com