FDPC8013S Datasheet, PDF (7/12 Pages) Fairchild Semiconductor – PowerTrench® Power Clip 30 V Asymmetric Dual N-Channel MOSFET

Typical Characteristics (Q2 N-Channel) T_J = 25 ^oC unlenss otherwise noted
100
V_GS = 10 V
80
V_GS = 6 V
V_GS = 4.5 V
60
V_GS = 3.5 V
40
V_GS = 3 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0.8
1.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
6
PULSE DURATION = 80 μs
5
V_GS = 3 V
DUTY CYCLE = 0.5% MAX
4
3
V_GS = 3.5 V
V_GS = 4.5 V
2
1
V_GS = 6 V
V_GS = 10 V
0
0
20
40
60
80
100
I_D, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
I_D = 26 A
V_GS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
7
PULSE DURATION = 80 μs
6
DUTY CYCLE = 0.5% MAX
5
I_D = 26 A
4
3
T_J = 125 ^oC
2
1
T_J = 25 ^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80 _{VDS = 5 V}
60
40
20
0
1.0
T_J = 125 ^oC
T_J = 25 ^oC
T_J = -55 ^oC
1.5
2.0
2.5
3.0
3.5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
100
V_GS = 0 V
10
T_J = 125 ^oC
1
0.1
0.01
T_J = 25 ^oC
T_J = -55 ^oC
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
7
FDPC8013S Rev.C1
www.fairchildsemi.com