FDP8870_08 Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

PSPICE Electrical Model
.SUBCKT FDP8870 2 1 3 ; rev December 2003
Ca 12 8 4.5e-9
Cb 15 14 4.5e-9
Cin 6 8 4.7e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 33.45
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 3.6e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 3.3e-9
GATE
1
LGATE
RLGATE
RLgate 1 9 36
RLdrain 2 5 10
RLsource 3 7 33
DPLCAP ₅
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
-
ESG
6
8
+
EVTHRES
+ ₁₉ -
EVTEMP
8
RGATE _{+ 18 - 6}
9
20 ²²
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
MMED
MSTRO
CIN
8
7
RSOURCE
S1A
12 ₁₃
8
S2A
14
15
13
RBREAK
17
LDRAIN
DRAIN
2
RLDRAIN
DBODY
LSOURCE
SOURCE
3
RLSOURCE
18
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.15e-3
Rgate 9 20 2.1
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 9e-4
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
S1B
S2B
CA
13
CB
+
+ ¹⁴
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),10))}
.MODEL DbodyMOD D (IS=7.5E-12 IKF=17 N=1.01 RS=2.1e-3 TRS1=2e-3 TRS2=2e-7
+ CJO=1.9e-9 M=0.57 TT=9e-11 XTI=2.6)
.MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.75e-9 IS=1e-30 N=10 M=0.4)
.MODEL MmedMOD NMOS (VTO=2.1 KP=30 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.1 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.51 KP=650 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.67 KP=0.1 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=21 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-9e-7)
.MODEL RdrainMOD RES (TC1=2.3e-3 TC2=5e-6)
.MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=8e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-2.3e-3 TC2=-9e-6)
.MODEL RvtempMOD RES (TC1=-3e-3 TC2=2e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=-0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3