SGL160N60UFD Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – Ultrafast IGBT

T_C = 25℃
100 ^{TC = 100℃}
10
100
V = 200V
R
I = 25A
F
T = 25℃
C
T = 100℃
C
10
1
0
1
2
3
Forward Voltage Drop, V_F [V]
Fig 18. Forward Characteristics
1000
800
V_R = 200V
I_F = 25A
T = 25℃
C
T_C = 100℃
600
400
200
0
100
di/dt [A/us]
Fig 20. Stored Charge
1000
1
100
di/dt [A/us]
1000
Fig 19. Reverse Recovery Current
120
V_R = 200V
I_F = 25A
T_C = 25℃
100
T_C = 100℃
80
60
40
20
100
di/dt [A/us]
1000
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1