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| FSBS3CH60 Datasheet, PDF (6/16 Pages) Fairchild Semiconductor – Smart Power Module | |||
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Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
VCE(SAT)
VF
HS
tON
tC(ON)
tOFF
tC(OFF)
trr
LS
tON
tC(ON)
tOFF
tC(OFF)
trr
ICES
Collector-Emitter
Saturation Voltage
FWD Forward Voltage
Switching Times
Collector-Emitter
Leakage Current
VCC = VBS = 15V
VIN = 5V
IC =3A, TJ = 25°C
VIN = 0V
IC =3 A, TJ = 25°C
VPN = 300V, VCC = VBS = 15V
IC = 3A
VIN = 0V â 5V, Inductive Load
(Note 3)
VPN = 300V, VCC = VBS = 15V
IC = 3A
VIN = 0V â 5V, Inductive Load
(Note 3)
VCE = VCES
Min. Typ. Max. Units
-
-
2.3
V
-
-
2.1
V
-
0.39
-
µs
-
0.19
-
µs
-
0.56
-
µs
-
0.19
-
µs
-
0.10
-
µs
-
0.57
-
µs
-
0.24
-
µs
-
0.62
-
µs
-
0.20
-
µs
-
0.10
-
µs
-
-
250
µA
Note:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
100% IC 100% IC
trr
VCE
IC
IC
VCE
V IN
VIN
tON
tC(ON)
V IN(O N)
10% IC 90% IC 10% VCE
(a) turn-on
tOFF
V IN (O FF )
tC(OFF)
10% VCE
10% IC
(b) turn-off
Figure 4. Switching Time Definition
6
www.fairchildsemi.com
FSBS3CH60 Rev. C
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