FNA51560T1 Datasheet, PDF (6/15 Pages) Fairchild Semiconductor – Motion SPMR 55 Series

Electrical Characteristics (T_J = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
V_CE(SAT)
V_F
HS
t_ON
t_C(ON)
t_OFF
t_C(OFF)
t_rr
LS
t_ON
t_C(ON)
t_OFF
t_C(OFF)
t_rr
I_CES
Collector - Emitter Saturation V_DD = V_BS = 15 V
Voltage
V_IN = 5 V
I_C = 15 A
T_J = 25°C
T_J = 150°C
FWDi Forward Voltage
V_IN = 0 V
I_F = 15 A
T_J = 25°C
T_J = 150°C
Switching Times
V_PN = 400 V, V_DD = V_BS = 15 V, I_C = 15 A
T_J = 25°C
V_IN = 0 V  5 V, Inductive load
(Note 7)
V_PN = 400 V, V_DD = V_BS = 15 V, I_C = 15A
T_J = 25°C
V_IN = 0 V  5 V, Inductive load
(Note 7)
Collector - Emitter Leakage V_CE = V_CES
Current
Min. Typ. Max. Unit
-
1.45 1.85
V
1.65
V
-
1.7
2.1
V
1.7
V
-
700
-
ns
-
140
-
ns
-
850
-
ns
-
140
-
ns
-
85
-
ns
-
800
-
ns
-
250
-
ns
-
850
-
ns
-
150
-
ns
-
90
-
ns
-
-
1
mA
Note:
7. t_ON and t_OFF include the propagation delay of the internal drive IC. t_C(ON) and t_C(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% IC 100% IC
t_rr
V_CE
I_C
I_C
V_CE
V _IN
V _{IN (O N )}
t_ON
10% I_C
t_C(ON)
90% I_C 10% VCE
(a) turn-on
V _IN
t_OFF
V _{IN (O F F)}
t_C(OFF)
10% V_CE
10% I_C
(b) turn-off
Figure 4. Switching Time Definition
©2014 Fairchild Semiconductor Corporation
6
FNA51560T1/T3 Rev. C0
www.fairchildsemi.com