FMS7G15US60S Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – Compact & Complex Module

Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
2400
2100
Cie s
1800
1500 ^{C oes}
Common Emitter
V_GE = 0 V, f = 1 MHz
T_C = 25 ^oC
1200
C re s
900
600
300
0
0.1
1
10
C o ll e c t o r - E m itt e r V o lt a g e , V [ V ]
CE
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 15A
T_C = 25℃ ℃℃
T_C = 125℃ ------
Ton
100
Tr
20
40
60
80
100
G ate R e sista n c e, R [ ]
G_Ω
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 15A
T_C = 25℃ ℃℃
T_C = 125℃ ------
T o ff
Tf
100
Tf
20
40
60
80
100
G ate R e sista n c e, R [ ]
G_Ω
Figure 11. Turn-On Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = ± 15V, R_G = 13Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 15A
T_C = 25℃ ℃℃
T_C = 125℃ ------
E o ff
Eon
E o ff
100
20
40
60
80
100
G ate R e sista n c e, R [ ]
G_Ω
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
V_GE = ± 15V, R_G = 13Ω
T_C = 25℃ ℃℃
1 0 0 0 ^TC ^{= 125℃ ------}
100 _Ton
Tr
5
10
15
20
25
30
C o ll e c t o r C u rr e n t, I c [ A ]
T o ff
T o ff
Tf
100
Tf
5
10
15
20
25
30
C o ll e c t o r C u rr e n t, I c [ A ]
6
FMS7G15US60S Rev. B1
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