FMS6G20US60S Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – Compact & Complex Module

Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
3000
2 7 0 0 _{Cie s}
2400
2100
C oes
1800
Common Emitter
V_GE = 0 V, f = 1 MHz
T_C = 25 ^oC
1500
C re s
1200
900
600
300
0
0.1
1
10
C o ll e c t o r - E m itt e r V o lt a g e , V [ V ]
CE
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 20A
T_C = 25℃ ℃℃
T_C = 125℃ ------
Ton
Tr
100
10 20 30 40 50 60 70 80 90 100
G ate R e sista n c e, R g [ ]
Ω
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 20A
T_C = 25℃ ℃℃
T_C = 125℃ ------
T o ff
Tf
100
Common Emitter
1000
V_CC = 300V, V_GE = ± 15V
I_C = 20A
T_C = 25℃ ℃℃
T_C = 125℃ ------
E o ff
Eon
E o ff
10 20 30 40 50 60 70 80 90 100
G ate R e sista n c e, R g [ ]
Ω
Figure 11. Turn-On Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = ± 15V, R_G = 10Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
Ton
Tr
100
100
10 20 30 40 50 60 70 80 90 100
G ate R e sista n c e, R g [ ]
Ω
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
1000
V_GE = ± 15V, R_G = 10Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
T o ff
100
Tf
10
15
20
25
30
35
40
C o ll e c t o r C u rr e n t, I [ A ]
C
10
10
15
20
25
30
35
40
C o ll e c t o r C u rr e n t, I [ A ]
C
6
FMS6G20US60S Rev. B1
www.fairchildsemi.com