FMG1G75US60L Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Molding Type Module

10000
Common Emitter
V_CC = 300V, V_GE = +/- 15V
R_G = 3.3Ω
T = 25⁰C
C
T = 1250C
C
Eoff
1000 _Eon
Eoff
Eon
100
20
40
60
80
100
120
140
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
500
I_C MAX. (Pulsed)
100 I MAX. (Continuous)
C
50us
100us
1㎳
10
DC Operation
1 ^{Single Nonrepetitive}
Pulse T = 25℃
C
Curves must be derated
linerarly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristics
1000
15
Common Emitter
R
L
=
4
Ω
T = 25℃
12
C
300 V
9
6
V = 100 V
CC
200 V
3
0
0
50 100 150 200 250 300 350
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
100
10
Safe Operating Area
V_GE = 20V, T_C = 100^oC
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA Characteristics
500
100
10
1
Single Nonrepetitive
Pulse T ≤ 125℃
J
V = 15V
GE
0.1
R
G
=
3.3
Ω
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V [V]
CE
Fig 17. RBSOA Characteristics
©2002 Fairchild Semiconductor Corporation
1
0.1
0.01
T = 25℃
C
IGBT :
1E-3
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMG1G75US60L Rev. A