FMC7G30US60 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Compact & Complex Module

10000
Common Emitter
V_GE = ± 15V, R_G = 7Ω
T_C = 25℃ ━━
T_C = 125℃ ------
1000
Eoff
Eon
Eoff
100
15
30
45
60
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
10Ω
12 ^{TC = 25℃}
V = 100 V
CC
9
300 V
200 V
6
3
0
0
20
40
60
80
100
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
200
100
I_C MAX. (Pulsed)
I_C MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1 Single Nonrepetitive
Pulse T_C = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
V = 20V, T = 100℃
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA Characteristics
100
10
1
Single Nonrepetitive
Pulse T ≤ 125℃
J
V = 15V
GE
R
G
=
7
Ω
0.1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
5
1
0.1
0.01
IGBT :
0.005
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMC7G30US60 Rev. A3