FMC6G50US60 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Compact & Complex Module

20000
10000
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 5.9Ω
T_C = 25℃
T_C = 125℃
1000
Eon
Eoff
100
20
40
60
80
100
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
5.9
Ω
T = 25℃
12
C
9
V = 100 V
CC
300 V
200 V
6
3
0
0
40
80
120
160
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
300
I MAX. (Pulsed)
100 ^C
I_C MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1 _{Single Nonrepetitive}
Pulse T = 25℃
C
Curves must be derated
linerarly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristics
1000
300
100
10
Safe Operating Area
V_GE = 20V, T_C = 100^oC
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA Characteristics
300
100
10
1
Single Nonrepetitive
Pulse T ≤ 125℃
J
V_GE = 15V
R
G
=
5.9
Ω
0.1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
5
1
0.1
0.01
IGBT :
1E-3
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMC6G50US60 Rev. A3