FMC6G20US60 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Compact & Complex Module

Common Emitter
V =±
GE
15V,
R
G
=
10Ω
T_C = 25℃ ━━
T_C = 125℃ ------
1000
Eoff
Eoff
Eon
100
10
15
20
25
30
35
40
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R_L = 15 Ω
T = 25℃
12
C
9
V = 100 V
CC
300 V
200 V
6
3
0
0
10
20
30
40
50
60
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
10
I MAX. (Continuous)
C
50us
100us
1㎳
1
DC Operation
Single Nonrepetitive
0.1 Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.01
0.3
1
10
100
Collector-Emitter Voltage, V [V]
CE
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
V = 20V, T = 100℃
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA Characteristics
80
10
1
Single Nonrepetitive
Pulse T_J ≤ 125℃
V_GE = 15V
R_G = 10 Ω
0.1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
10
1
0.1
IGBT :
0.01
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMC6G20US60 Rev. A3