FDMS7660AS Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFET 30 V, 42 A, 2.4 mΩ

Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7660AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
30
25
20
di/dt = 300 A/µs
15
10
5
0
-5
0
50
100
150
200
250
TIME (ns)
Figure 14. FDMS7660AS SyncFET body
diode reverse recovery characteristic
10^-2
T_J = 125 ^oC
10^-3
T_J = 100 ^oC
10^-4
10^-5
10^-6
0
T_J = 25 ^oC
5
10
15
20
25
30
V_DS, REVERSE VOLTAGE (V)
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
FDMS7660AS Rev.C
6
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