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FDMF6706B Datasheet, PDF (6/19 Pages) Fairchild Semiconductor – Extra-Small, High-Performance, High- Frequency DrMOS Module
Electrical Characteristics
Typical values are VIN = 12V, VCIN = 5V, VDRV = 5V, and TA = +25°C unless otherwise noted.
Symbol
Parameter
Basic Operation
IQ
UVLO
Quiescent Current
UVLO Threshold
UVLO_Hyst UVLO Hysteresis
PWM Input (VCIN = VDRV = 5V ±10%)
RUP_PWM Pull-Up Impedance
RDN_PWM Pull-Down Impedance
VIH_PWM PWM High Level Voltage
VTRI_HI 3-State Upper Threshold
VTRI_LO 3-State Lower Threshold
VIL_PWM PWM Low Level Voltage
tD_HOLD-OFF 3-State Shut-off Time
VHiZ_PWM 3-State Open Voltage
PWM Input (VCIN = VDRV = 5V ±5%)
RUP_PWM Pull-Up Impedance
RDN_PWM Pull-Down Impedance
VIH_PWM PWM High Level Voltage
VTRI_HI 3-State Upper Threshold
VTRI_LO 3-State Lower Threshold
VIL_PWM PWM Low Level Voltage
tD_HOLD-OFF 3-State Shut-off Time
VHiZ_PWM 3-State Open Voltage
DISB# Input
VIH_DISB High-Level Input Voltage
VIL_DISB
IPLD
Low-Level Input Voltage
Pull-Down Current
tPD_DISBL Propagation Delay
tPD_DISBH Propagation Delay
SMOD# Input
VIH_SMOD High-Level Input Voltage
VIL_SMOD Low-Level Input Voltage
IPLU
Pull-Up Current
tPD_SLGLL Propagation Delay
tPD_SHGLH Propagation Delay
Condition
Min. Typ. Max. Unit
IQ=IVCIN+IVDRV, PWM=LOW or HIGH or Float
2 mA
VCIN Rising
2.9 3.1 3.3 V
0.4
V
26
kΩ
12
kΩ
1.88 2.25 2.61 V
1.84 2.20 2.56 V
0.70 0.95 1.19 V
0.62 0.85 1.13 V
160 200 ns
1.40 1.60 1.90 V
26
kΩ
12
kΩ
2.00 2.25 2.50 V
1.94 2.20 2.46 V
0.75 0.95 1.15 V
0.66 0.85 1.09 V
160 200 ns
1.45 1.60 1.80 V
PWM=GND, Delay Between DISB# from
HIGH to LOW to GL from HIGH to LOW
PWM=GND, Delay Between DISB# from
LOW to HIGH to GL from LOW to HIGH
2
V
0.8 V
10
µA
25
ns
25
ns
2
V
0.8 V
10
µA
PWM=GND, Delay Between SMOD# from
HIGH to LOW to GL from HIGH to LOW
10
ns
PWM=GND, Delay Between SMOD# from
LOW to HIGH to GL from LOW to HIGH
10
ns
Continued on the following page…
© 2011 Fairchild Semiconductor Corporation
FDMF6706B • Rev. 1.0.1
6
www.fairchildsemi.com