FDD8444L_F085_09 Datasheet, PDF (6/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40V, 50A, 6.0mΩ

Typical Characteristics
1.4
V_GS = V_DS
1.2
I_D = 250µA
1.0
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE(^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.10
I_D = 250uA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
C_iss
C_oss
C_rss
f = 1MHz
VGS = 0V
100
0.1
1
10
60
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
10
ID = 50A
8
6
V_DD = 15V
V_DD = 20V
V_DD = 25V
4
2
0
0
20
40
60
80
100
Q_g, GATE CHARGE(nC)
Figure 14. Gate Charge vs Gate to Source Voltage
FDD8444L_F085 Rev A (W)
6
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