FDC6322C Datasheet, PDF (6/7 Pages) Fairchild Semiconductor – Dual N & P Channel , Digital FET

Typical Electrical Characteristics: P-Channel
-1.5
VGS = -4.5V
-1.25
-1
-3.5
-3.0
-2.7
-2.5
-0.75
-2.0
-0.5
-0.25
0
0
-1.5
-1
-2
-3
-4
-5
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
-1.6
-1.4 ^V GS ^{= -2.0 V}
-1.2
-2.5
-2.7
-1
-3.0
-3.5
-0.8
-4.0
-4.5
-0.6
0
-0.2
-0.4
-0.6
-0.8
-1
I _D , DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I_D = -0.25A
1.4 V GS = -2.7V
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T _J, JUNCTION TEMPERATURE (°C)
Figure 13. On-Resistance Variation
with Temperature.
5
25°C
4
125°C
3
I _D = -0.5A
2
1
0
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
V _GS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On Resistance Variation with
-1
-0.75
VDS = -5V
-0.5
T = -55°C
J
25°C
125°C
-0.25
0
-0.5
-1
-1.5
-2
-2.5
-3
V _GS , GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
0.5
V_GS = 0V
0.1
0.01
TJ = 125°C
25°C
-55°C
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC6322C.Rev B1